Figure 6From: Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers AFM amplitude image of (a) a-Si and (b) a-Ge single layer after annealing at 350°C for 4 h. H flow rate 1.5 ml/min. In (a) bumps (close bubbles with H still inside) are predominant (only one is broken). In (b) large craters, i.e. exploded bumps with escape of H, are by far predominant. Very tiny bumps are also present.Back to article page