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Table 1 The binding energy $E_{b} = E_{H - BC} X - E_{{BC}_{X}} - E_{Hatom}$ , the increasing rate of lattice constant relative to grapheme ϵ_rare = (a-a _Graphene)/(a _Graphene), the energy gain of the ferromagnetic state E _M = E _FM - E _NM, the total magnetic moment m _total, the carbon atomic magnetic moment $m_{C_{α}}$ , and the electronic property for each semi-hydrogenated sheet

From: First-principles study of half-metallicity in semi-hydrogenated BC₃, BC₅, BC₇, and B-doped graphone sheets

	E _b(eV/H)	ε _rate (%)	E _M(meV/C_a)	m _total (μ _B)	$m_{C_{α}}$ (μ _B)	Property
Graphone	-0.63	2.75	-271	4.00	0.79	Semiconductor (0.4 eV)
H-BC₃	-1.53	6.59	-51	1.00	0.31	Half-metal (1.18 eV)
H-BC₅	-1.10	4.47	-47	1.00	0.31	Half-metal (1.12 eV)
H-BC₇	-0.94	4.11	-84	2.00	0.34/0.72	Half-metal (1.50 eV)
B-doped graphone	-0.67	2.96	-221	14.00	0.35/0.78	Half-metal (2.25 eV)

The numerical values are listed following "Semiconductor" is the band gap, and those listed following "Half-metal" are half-metal gaps

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