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Table 1 Numerical parameters used in the simulation for the GaInNAs/GaAs sample [7]

From: Nonlinear dynamics of non-equilibrium holes in p-type modulation-doped GaInNAs/GaAs quantum wells

Material Thickness (Å) Doping (m-3)  
GaAs (cap) 500 Be: 1 × 1024 ×3
GaAs (barrier) 200 Be: 1 × 1024 ×3
GaAs (spacer) 50 UD ×3
Ga1-xInxNyAs1-y QW 70 UD ×3
GaAs (spacer) 50 UD ×3
GaAs (barrier) 200 Be: 1x1024 ×3
GaAs (buffer) 500 UD ×3
  1. Semi-insulating GaAs substrate