Figure 3From: Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods Calculated (200) DF contrast function C 200 for In x Ga 1-x As (dash and dot line), GaAs 1- y P y (solid line) and In x Ga 1- x As 1- y P y with x = 0.1 (dash line) (see text).Back to article page