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Table 2 Values of the experimental ratio R exp of the HAADF intensity I HAADF of sublayer #2 to those of the three alloys (GaAs substrate, In0.51Ga0.49P and Al0.26Ga0.74As) contained in the sample and used as standards

From: Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

 

I HAADF ( Subl # 2 ) I HAADF ( GaAs )

I HAADF ( Subl # 2 ) I HAADF ( In 0.51 Ga 0.49 P )

I HAADF ( Subl # 2 ) I HAADF ( Al 0.26 Ga 0.74 As )

R exp

0.97

1.03

1.06

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