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Table 2 Values of the experimental ratio R exp of the HAADF intensity I HAADF of sublayer #2 to those of the three alloys (GaAs substrate, In0.51Ga0.49P and Al0.26Ga0.74As) contained in the sample and used as standards

From: Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods

  I HAADF ( Subl # 2 ) I HAADF ( GaAs ) I HAADF ( Subl # 2 ) I HAADF ( In 0.51 Ga 0.49 P ) I HAADF ( Subl # 2 ) I HAADF ( Al 0.26 Ga 0.74 As )
R exp 0.97 1.03 1.06