Light-emitting diodes enhanced by localized surface plasmon resonance

Table 1 Summary of representative experimental results showing the important relationship between the LSPR energy and emission energy in order to attain the best enhancement

Emitting materials and configurations	Peak emission energy (nm)	Metal used	Optical properties of metal layer	Enhancement	References
InGaN/GaN multiple QW	463	Ag	Transmittance exhibits absorption from 396 to 455 nm	32.2% with an 100-mA current	Kwon et al. [33]
Alq₃ thin film	525	Au	A peak in absorption at 510 nm	20-fold	Fujiki et al. [34]
InGaN/GaN QW	550	Ag	A dip in transmission at about 550 nm	150% in peak intensity with a 20-mA current	Yeh et al. [36]
InGaN/GaN QW	465	Au	A dip in transmission in 511 nm	180% with a 20-mA current	Sung et al. [37]
Organic poly	575	Ag	Large absorption from 330 to 500 nm	Sixfold	Qiu et al. [41]
Si QD	600	Ag	A peak in absorption at 535 nm	Reaches maximum at 530 nm	Kim et al. [42]
ZnMgO alloys	357	Pt	Extinction band near 350 nm	Sixfold	You et al. [44]
ZnO film	380	Ag	Extinction band near 370 nm	Threefold	Cheng et al. [45]
Si-on-insulator	1,140	Ag	A dip in transmission at about 520 nm	2.5-fold in peak intensity	Pillai et al. [48]
CdSe/ZnS nanocrystals	580	Au	A peak in absorption at about 600 nm	30-fold	Pompa et al. [53]
Si QD	775	Ag	A dip in transmission at 710 nm	Twofold, with the peak blue shifts	Biteen et al. [54]
GaN	440	Ag	A dip in transmission at about 440 nm	Twofold	Mak et al. [62]