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Figure 4 | Nanoscale Research Letters

Figure 4

From: Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain

Figure 4

Strain dependence of RD intensity and energies of 1e1hh, 1e2hh and 1e1lh. (a) RD intensity of the transitions 1e1hh (squares), 1e2hh (circles) and 1e1lh (triangles) vs. strain after subtracting the RD contribution under zero strain. The solid lines are the linear fitting of the experimental data. (b) The transition energies vs. strain. The solid lines in (b) are calculated from the envelope function theory (1e 0 = 3.23 × 10-5)

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