Figure 1From: Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes Sketch of the general wrinkling process in three steps. (a) Pre-defined wrinkling structure by photolithography and wet chemical processing, (b) selective HF etching of the sacrificial AlAs layer and starting release of the strained InGaAs layer, (c) bond back and wrinkling of the released functional InGaAs layer.Back to article page