Figure 4
From: Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes
Versatility of wrinkling. Alternative wrinkling structures leading to different channel arrangements such as (a) multiple openings for circular mesa structures and (b) parallel alignment of channels for stripe-like mesa structures. (c) An SEM image of a squared GaAs mesa structure with a wrinkled In0.2Ga0.8As layer on top. (d) An SEM/FIB cut image of one wrinkled nanochannel. The carbon cover protects the wrinkled structure during the FIB cut. Unlabeled scale bars are 2 μm.