Figure 6From: Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes Electrical measurements. (a) Transistor conductance over time at different electrode configurations. Biases were applied at 0 s to the electrodes and the measurement started after 2 s. The fast decay of the polarization effects enables the measurement of the real current without additional effects after 55 s. (b) Ion current modulation by changing the gate bias while keeping V S = 0 V and setting V D = +1 V for detecting Cl- ions (red points) and V D = -1 V for detecting K+ ions (black points).Back to article page