Figure 1From: Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED A diagram of sample cooling after the thermal treatment at 925°C measured by IR pyrometer; cooling rates are as follows: ~0.17°C/s or "slow cooling" of the STM samples (1); ~0.4°C/s or "quenching" of the STM samples (2) and 2" wafers (3).Back to article page