Figure 11
STM images of the Si(001) surface: the images of the same area obtained in the (a) empty-state (+1.96 V, 120 pA) and (b) filled-state (-1.96 V, 100 pA) modes; for the convenience of comparison, 'D' indicates the same vacancy defect; corresponding Fourier transforms are shown in the insets. A 3D STM empty-state micrograph (+2.0 V, 200 pA) of the Si(001)-c(8 × 8) surface is shown in (c).