Figure 3From: Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED STM images and line scans of the same region on the Si(001) surface: (a) empty states (+1.7 V, 100 pA) and (b) filled states (-2.0 V, 100 pA); positions of extremes of line scan profiles (c) match exactly for the empty- (1) and filled-state (2) distributions along the corresponding lines in the images (a) and (b).Back to article page