Figure 5From: Defect induced changes on the excitation transfer dynamics in ZnS/Mn nanowires The experimental data and the fitted curves from Mn PL transients. ZnS/Mn wire samples with a Mn concentration 0.28 at.% which were implanted at temperatures of (a) 300°C and (b) 600°C as well as samples with additional neon irradiation by a total ion fluence of (c) 4.38·1012 cm-2 and of (d) 4.38·1013 cm-2.Back to article page