Figure 4From: Crystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide AFM images and cross-sectional curves of oxide lines on c-plane 4H-SiC obtained under different scan speeds: (a) 8.376 μm/s; (b) 5.235 μm/s; (c) 2.094 μm/s; and (d) 1.047 μm/s.Back to article page