Table 1 Oxidation rates of AFM-LO and thermal oxidation, as well as theoretical planar atomic density at three different plane orientations of 4H-SiC orientations with doping concentration profiles of 4H-SiC
Process | Oxide height (nm) | ||
|---|---|---|---|
a-plane 4H-SiC | c-plane 4H-SiC | m-plane 4H-SiC | |
Thermal oxidation (nm) | 109.1 | 153.7 | 81.1 |
Planar atomic density (atoms/cm2) | 7.45 | 12.17 | 6.42 |
Local oxidation (nm) | 6.5 | 30 | 13 |
Doping concentration (×1018 cm-2) | 5.9 | 9.6 | 9.3 |