Figure 1
From: Theory and simulation of photogeneration and transport in Si-SiO x superlattice absorbers

Spatial structure and doping profile of the p - i ( SL )- n model system. The doping level is N d = 1018 cm -3 for both electrons and holes.
From: Theory and simulation of photogeneration and transport in Si-SiO x superlattice absorbers
Spatial structure and doping profile of the p - i ( SL )- n model system. The doping level is N d = 1018 cm -3 for both electrons and holes.