Figure 6From: Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001) HRXTEM analyses on the samples annealed at different temperatures. Images on the samples annealed at 1600 (a), 1700 (b) and 2000°C (c), and corresponding linescans ((d), (e) and (f)), showing 3, 8 and 18 layers grown on the surface of 4H-SiC, respectively.Back to article page