Figure 7From: Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001) Optical and AFM images of O 2 etched striped in graphitized 4H-SiC. Optical image on the sample annealed at 1700°C (a). AFM height profile taken on a stripe on pristine SiC (b) and on the sample annealed at 1700°C (c), respectively.Back to article page