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Table 1 Simulation parameters of the Si-ng and Nd3+ transitions.

From: Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method

Transition

lifetime(s)

type

ω ij (s -1)

Δω ij (s -1)

Si →Si *

4 10-11

R

3.86 1015

4.4 1014

3 → 2

2.3 10-16

NR

  

2 → 0

3 10-10

R

2.07 1015

1.38 1014

2 → 1

3 10-10

R

1.7 1015

1.39 1014

2 → 4

3 10-10

R

1.3 1015

1.33 1014

4 → 1

9.7 10-16

NR

  

1 → 0

5.1 10-16

NR

  
  1. R and NR stand for radiative and non-radiative transitions respectively.

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