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Table 1 Simulation parameters of the Si-ng and Nd3+ transitions.

From: Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method

Transition lifetime(s) type ω ij (s -1) Δω ij (s -1)
Si →Si * 4 10-11 R 3.86 1015 4.4 1014
3 → 2 2.3 10-16 NR   
2 → 0 3 10-10 R 2.07 1015 1.38 1014
2 → 1 3 10-10 R 1.7 1015 1.39 1014
2 → 4 3 10-10 R 1.3 1015 1.33 1014
4 → 1 9.7 10-16 NR   
1 → 0 5.1 10-16 NR   
  1. R and NR stand for radiative and non-radiative transitions respectively.