Figure 5From: Origins of 1/f noise in nanostructure inclusion polymorphous silicon films Temperature dependence of 1/ f noise in pm -Si:H film. (a) Temperature dependence of 1/f noise in pm-Si:H film. Inset: temperature dependence of TCR value for samples with various doping ratios; (b) temperature dependence of total carriers number (N C) on various doping ratios in pm-Si:H films. Inset: temperature dependence of noise parameter in Hooge's formula.Back to article page