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Table 1 Structure and electrical properties for different doping ratios in pm-Si:H film

From: Origins of 1/f noise in nanostructure inclusion polymorphous silicon films

Sample	R _v	h(nm)	R ₀(MΩ)	N _C	β(%)	X _C(%)	H(%)	Void (%)
A	10^-2	326	2.42	4.24 × 10¹⁴	2.78	20	18	0
B	10^-3	335	4.53	3.54 × 10¹³	2.93	18	16	0.5
C	10^-4	341	6.76	4.23 × 10¹²	3.28	17	15	0.8
D	10^-5	352	8.21	3.85 × 10¹¹	3.45	14	13	1

R _v, gas doping ratio; h, film thickness (nm); N _C, total number of carriers; TCR value-β (%), TCR = 1/R*(dR/dT)*100; resistivity at temperature of 300 K-R ₀ (MΩ); X _C, crystal volume fraction (%); H, hydrogen content (%); void, void volume fraction (%)

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