Table 1 Structure and electrical properties for different doping ratios in pm-Si:H film
From: Origins of 1/f noise in nanostructure inclusion polymorphous silicon films
Sample | R v | h(nm) | R 0(MΩ) | N C | β(%) | X C(%) | H(%) | Void (%) |
---|---|---|---|---|---|---|---|---|
A | 10-2 | 326 | 2.42 | 4.24 × 1014 | 2.78 | 20 | 18 | 0 |
B | 10-3 | 335 | 4.53 | 3.54 × 1013 | 2.93 | 18 | 16 | 0.5 |
C | 10-4 | 341 | 6.76 | 4.23 × 1012 | 3.28 | 17 | 15 | 0.8 |
D | 10-5 | 352 | 8.21 | 3.85 × 1011 | 3.45 | 14 | 13 | 1 |