Figure 2From: Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure Temperature dependence of PL peak energy (a), FWHM (b), normalized intensity (c) of the as-grown sample. Solid lines in (a) are the fitting by varshni relation for bulk material and dashed lines in (c) are the fitting of quenching of intensity according to the Arrhenius relation.Back to article page