Figure 3
From: Organic nanofibers integrated by transfer technique in field-effect transistor devices
Measured transistor characteristics for BC/BG nanofibers. (a) Current versus gate voltage for V ds = -15 V. Inset shows schematic Mott-Schottky energy scheme for negative gate and drain voltages. (b) Current versus drain-source voltage for zero gate voltage. Arrows indicate the sweep direction. Inset shows energy level positions: the work function level for the gold drain and source electrodes (5.1 eV) and the LUMO (3.0 eV) and HOMO (6.0 eV) levels for p 6P. (c) Mott-Schottky energy scheme for zero gate voltage and negative drain voltage. (d) Mott-Schottky energy scheme for zero gate voltage and positive drain voltage.