Figure 1From: A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates AFM image (1 × 1 μm 2 ) of GeSi nanowires after 0.8 nm Ge deposition on a vicinal Si (001) substrate with ~8° off toward ⟨110⟩ at 560°C. The black arrow indicates the miscut direction. The inset shows the height profile along the white line in the figure.Back to article page