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Figure 2 | Nanoscale Research Letters

Figure 2

From: A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates

Figure 2

AFM image (0.5 × 0.5 μm 2 ) of the surface morphology after. (a) 1.2 nm Ge at 560°C, (b) 1.5 nm Ge at 580°C, (c) 1.2 nm Ge at 600°C (phase image), on vicinal Si (001) substrates with ~8° off toward 110, (d) height of nanowires vs growth temperature. The black arrows in (a), (b), and (c) denote the miscut direction of the substrates. The dashed line in (d) is for eye-guide. The numbers in (d) are the corresponding amount of nominal Ge deposition.

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