Figure 3From: A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates AFM image (1 × 1 μm 2 ) of the surface morphology after 1.1 nm Ge deposition at 560°C on vicinal Si (001) substrates with. (a) 2°, (b) 4°, (c) 8°, (d) 10° off toward ⟨110⟩. The black arrows denote the miscut direction.Back to article page