Figure 3From: Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering 2D GISAXS maps. 2D GISAXS maps. of (a) as deposited film (b) film annealed at 700°C, and (c) film annealed at 800°C. The second row shows the corresponding simulated GISAXS maps.Back to article page