Figure 5
From: Low-temperature fabrication of layered self-organized Ge clusters by RF-sputtering
Raman spectra of as-deposited and annealed multilayers. (a) Raman spectra of the as-deposited and annealed multilayers at temperatures indicated in the figure. The spectra are normalized to the intensity of Si-substrate peak at 520 cm-1. (b) The same spectra after the subtraction of Si substrate contribution. Dashed lines show the positions of peaks of amorphous Ge (a-Ge), crystalline Ge (c-Ge), and Si-Ge vibrational modes.