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Figure 11 | Nanoscale Research Letters

Figure 11

From: CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth

Figure 11

STM topographs of Ge hut cluster dense arrays at different coverages ( T gr = 360°C): (a, b) h Ge = 14 Å [(a) U s = +1.75 V, I t = 80 pA, (b) U s = +3.0 V, I t = 100 pA]; (c, d) h Ge = 15 Å [(c) U s = +2.0 V, I t = 120 pA, (d) 20.3 × 20.4 nm, U s = +3.6 V, I t = 120 pA]; w indicates the WL patches, and i shows a distorted small Ge island 3 ML high over WL.

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