Figure 2From: CMOS-compatible dense arrays of Ge quantum dots on the Si(001) surface: hut cluster nucleation, atomic structure and array life cycle during UHV MBE growth STM images of Ge WL on Si(001): (a) c(4 × 2) (c) and p(2 × 2) (p) reconstructions within the (M × N) patches, h Ge = 6. 0 Å, U s = +1.80 V, I t = 80 pA; (b) new formations arise on the (M × N) patches due to nucleation of Ge pyramid (1) and wedge (2), h Ge = 6,0 Å, U s = +2.60 V, I t = 80 pA.Back to article page