Figure 7From: Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing Plot of ln( I ) vs. ln( L sp 1/2 ) for the as-grown and 600°C annealed QD devices with cavity length of 2 mm at room temperature. The I th,GS of the as-grown and 600°C annealed QD device is 93.6 and 81.8 mA, respectively.Back to article page