Figure 3

HRTEM images of single PANI nanowire and SMNWs with different ZnO NPs concentrations. (a) Single 10 wt.% ZnO NPs-entrapped nanowire was extracted from the electrode and transferred to the TEM sample grid by a nanomanipulator. The SMNW was scratched laterally at the end of nanowire and detached. (b) HRTEM image of single PANI nanowire: 0 wt.% ZnO NP concentration. ZnO NPs are absent in this single nanowire. Note the good width uniformity of 137.5 nm. (c) HRTEM image of 5 wt.% ZnO NPs (width, 154 nm) and (d) 10 wt. % ZnO NPs-entrapped PANI nanowires (width, 113 nm). The diffraction pattern for each SMNW is shown in the corresponding inset. Note the ring patterns (PANI) and dots indicating randomly oriented crystalline structure (ZnO). (e) 1 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. (f) 2.5 wt.% ZnO NPs-entrapped PANI nanowire from applying a current of 900 nA in the growing condition. The SMNWs of (e) and (f) show tightly agglomerated ZnO NPs inside the nanowire similar to the nanowire of (d).