Figure 3From: Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application HR-SEM images of the pattern transfer process. (a) Cross-section view of the etched multilayer structure after pattern transfer to the SiO2 and ARC layers. (b) Cross-section view of the structure after pattern transfer to the HfO2 layer, showing re-deposition of reaction by-products on the sidewalls. (c) View of the nanostructured HfO2 stripes.Back to article page