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Figure 4 | Nanoscale Research Letters

Figure 4

From: Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

Figure 4

Schematic of the HfO 2 nanostructuring process. (a) Schematic drawing of the starting multilayer structure. (b) Patterning of the photoresist by laser interference lithography. (c) Pattern transfer to the SiO2 layer by CF4 ICP-RIE. (d) Pattern transfer to the ARC by O2 ICP-RIE. (e) Selective ICP-RIE of the HfO2 layer with CF4. (f) Elimination of the ARC with O2 ICP-RIE and final cleaning with HCl/H2O.

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