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Figure 5 | Nanoscale Research Letters

Figure 5

From: Fabrication of HfO2 patterns by laser interference nanolithography and selective dry etching for III-V CMOS application

Figure 5

HR-TEM images of the pattern transfer process. (a) Bright-field cross-section image of the periodic HfO2 stripe pattern. (b) Close-up view of an etched trench. The GaAs surface structure appears modified by the plasma etch. The formation of a sloped sidewall can also be seen. (c) Close-up view of a 100-nm-wide HfO2 mesa stripe. The formation of an approximately 10-nm-wide foot due to mask erosion is observed on both sides of the HfO2 mesa.

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