Figure 5
From: Fabrication of ultrahigh-density nanowires by electrochemical nanolithography
SEM and HRTEM images of etched nanowires. (a) 45°-tilted view of nanowires with Ag nanoparticle caps. (b) Side view of nanowires, the Ag particles are removed by HNO3. Some nanowires are bent because of air blow-drying of the sample after the dip in HNO3 and rinsing in DI water. (c) Cross-sectional TEM image of superlattice nanowires with Ag particles retained. The darker lines are the SiGe alloy. The lateral width of the SiGe layer is smaller than the Si layer because Ge etches faster than pure Si in a SF6/C2H2F4 plasma. (d) HRTEM image showing the atomic detail of different sections. The dashed lines guide the eye to the interfaces between Si and SiGe.