Figure 4From: Simultaneous fabrication of line defects-embedded periodic lattice by topographically assisted holographic lithography The effect of relief height on phase-shift phenomenon. FE-SEM images after UV flood exposure at an energy of 14.5 mJ/cm2 and development with the embossed PR at 90°C by the stamps having a relief height of (a) 90 nm, (b) 130 nm and (c) 260 nm.Back to article page