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Table 1 Growth parameters and morphology statistics of InAs NWs grown in sample A, B, and C.

From: Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Sample

Temperature

H2 flow rate

D(nm)

L(μm)

ρ(μm-2)

L/D

A

530°C

12 L/min

35

2.0

7-8

57.1

B

550°C

12 L/min

42

1.8

5-6

42.9

C

570°C

12 L/min

70

1.2

3-4

17.1

  1. Morphology statistics: average diameter, average length, and average density.

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