Figure 3From: Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application Sketch map of multi-bit storage operation and remnant polarization comparison between an embossed and an un-embossed region. (a) Schematically illustration of multi-bit storage operation for embossed regions on a PZT film. (b) Remnant polarization ratio of the embossed and the un-embossed regions in a PZT film in the voltage range from 1 to 10 V.Back to article page