Figure 4From: Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application Hysteresis loops of the embossed region in the voltages of 3 and 5 V, respectively. The same loops obtained from the un-embossed region of the same PZT thin film is obtained under 3 V for comparison.Back to article page