Figure 5From: Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application Fatigue measurements from both embossed and un-embossed areas. Change in switchable polarization as a function of the number of switching cycles for both embossed region with the biases of 5 and 3 V, respectively. Also shown in the figure is the switching behavior from the un-embossed region on the same PZT thin film under 5 V.Back to article page