Figure 3
From: Atom devices based on single dopants in silicon nanostructures
Single-electron transfer between two donors. (a) Low-temperature I D -V G characteristics showing a single-donor current peak used as a sensor for detecting charging and discharging of a neighboring donor. (b)-(c) Charging and discharging are sensed as abrupt jumps of the current (producing a hysteresis between up-ramping and down-ramping curves) and (d) as RTS in the time-domain measurements.