Figure 5
From: Atom devices based on single dopants in silicon nanostructures
KFM observation of discrete dopants in device channel. (a) Setup for LT-KFM measurements, showing in the inset the topography of the measured channel area. (b) Simulated surface electronic potential map due to ionized P donors in a thin Si layer. (c) Measured electronic potential maps at the surface of P-doped SOI-FETs (lower panels are line profiles through some of the dark spots, i.e., regions of lower electronic potential).