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Table 1 Comparison of the obtained values of E g(ZrO2), E g(IL), ΔE v, and ΔE c

From: Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

Type Deposition method E g(ZrO2) E g(IL) ΔE v ΔE c Reference
(i) Evaporation 5.50 8.60 1.00 1.90 [10]
  Sputtering 5.40 7.60 1.00 1.20 [11]
  Atomic layer chemical vapor deposition 5.80 7.60 1.15 1.05 [12]
  Electron beam deposition of Zr + oxidation in O2 5.80 9.00 1.80 1.40 [13]
(ii) PLD 5.70 4.70 3.30 to 3.50 1.50 [14]
(iii) Sputtering of Zr + oxidation and nitridation in N2O 6.20 to 6.50 8.20 to 8.80 4.75 3.40 This work
  1. Type (i) defines alignment of ZrO2 bandgap in between the IL bandgap and type (ii) defines alignment of ZrO2 conduction band outside the IL bandgap. Type (iii) defines ZrO2 valence band outside the IL bandgap which is obtained from this work.