Table 1 Comparison of the obtained values of E g(ZrO2), E g(IL), ΔE v, and ΔE c
From: Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si
Type | Deposition method | E g(ZrO2) | E g(IL) | ΔE v | ΔE c | Reference |
|---|---|---|---|---|---|---|
(i) | Evaporation | 5.50 | 8.60 | 1.00 | 1.90 | [10] |
Sputtering | 5.40 | 7.60 | 1.00 | 1.20 | [11] | |
Atomic layer chemical vapor deposition | 5.80 | 7.60 | 1.15 | 1.05 | [12] | |
Electron beam deposition of Zr + oxidation in O2 | 5.80 | 9.00 | 1.80 | 1.40 | [13] | |
(ii) | PLD | 5.70 | 4.70 | 3.30 to 3.50 | 1.50 | [14] |
(iii) | Sputtering of Zr + oxidation and nitridation in N2O | 6.20 to 6.50 | 8.20 to 8.80 | 4.75 | 3.40 | This work |