Figure 5From: Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles Forward and reverse current-voltage characteristics of Schottky diodes. Prepared by painting 0.0868, 0.0699, and 0.0769 mm2 colloidal graphite on Pd NPs deposited InP (circles) and GaN (squares) and on plain InP (triangles).Back to article page