Figure 7From: Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles Current transient responses of the GaN-Pd-C Schottky diode. Upon alternating exposure to the flow of the gas blend 0.1% H2/N2 and of the air. Transients measured shortly after preparing the diode (1) and later after 3 months (2) are shown The diode was forward biased with the constant voltage of 0.5 VBack to article page