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Table 1 The comparison of performances of the ZnO nanostructures-based photodetectors

From: Enhanced UV photosensitivity from rapid thermal annealed vertically aligned ZnO nanowires

Morphology Device type Light of detection (nm) Bias (V) Maximum photosensitivity Photosensitivity enhancement factor from unmodified photodetector Reference
Nanowires Resistor 369 2.5 24200 Approximately 5.4 Present work
Nanowire Resistor 365 5 104 - 106 - [4]
Thinfilm   365 5 31300 Approximately 4.2 [5]
Nanowires film Resistor 254 5 17.7 - [10]
Nanowires Resistor 370 3 3367 Approximately 5.2 [13]
Nanowires film Resistor 365 8 - Approximately 4.7 [14]
Nanorod Resistor 370 20 - Approximately 3.0 [16]
Nanowires Resistor 360 3 104 Approximately 2.8 [27]
Nanowires n-i-n junction 365 -5 1345 - [28]
Nanowire Resistor 390 5 104 - [29]