Table 1 The comparison of performances of the ZnO nanostructures-based photodetectors
From: Enhanced UV photosensitivity from rapid thermal annealed vertically aligned ZnO nanowires
Morphology | Device type | Light of detection (nm) | Bias (V) | Maximum photosensitivity | Photosensitivity enhancement factor from unmodified photodetector | Reference |
|---|---|---|---|---|---|---|
Nanowires | Resistor | 369 | 2.5 | 24200 | Approximately 5.4 | Present work |
Nanowire | Resistor | 365 | 5 | 104 - 106 | - | [4] |
Thinfilm | 365 | 5 | 31300 | Approximately 4.2 | [5] | |
Nanowires film | Resistor | 254 | 5 | 17.7 | - | [10] |
Nanowires | Resistor | 370 | 3 | 3367 | Approximately 5.2 | [13] |
Nanowires film | Resistor | 365 | 8 | - | Approximately 4.7 | [14] |
Nanorod | Resistor | 370 | 20 | - | Approximately 3.0 | [16] |
Nanowires | Resistor | 360 | 3 | 104 | Approximately 2.8 | [27] |
Nanowires | n-i-n junction | 365 | -5 | 1345 | - | [28] |
Nanowire | Resistor | 390 | 5 | 104 | - | [29] |