Figure 2
From: Influence of the oxide layer for growth of self-assisted InAs nanowires on Si(111)
Temperature and NW morphology across a 2-inch substrate. (A) Simulation of the temperature during Ga-deoxidization and growth. Inset shows the full wafer. (B, C) Morphology of NWs for two pre-treatment methods as a function of the radial distance from the center. The blue curve is data from the growth with Ga-deoxidization shown in Figure 1 and the red curve is an HF deoxidized substrate with similar growth conditions. The longest NWs grown on the Ga-deoxidized substrate is observed to be at position B marked in Figure 1. The growth time is 60 min and an As4 BEP of 1.30 × 10-5 torr, corresponding to a V/III-ratio of 320 has been used for both substrates.