Figure 4From: Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility STM images of Ge WL on Si(001): T gr = 360°C, the ordinary c(4 × 2) (c) and p(2 × 2) (p) reconstructions within the M × N patches are often observed simultaneously, a h Ge = 4.4 Å, U s = -1.86 V, I t = 100 pA, only the c(4 × 2) structure is resolved; b h Ge = 5.1 Å, U s = -3.78 V, I t = 100 pA, both c(4 × 2) and p(2 × 2) structures are revealed as well as nuclei of a pyramid (1) and a wedge (2); c, d h Ge = 6.0 Å, U s = +1.80 V, I t = 80 pA, both c(4 × 2) and p(2 × 2) reconstructions are well resolved; e h Ge = 5.1 Å, U s = -3.78 V, I t = 100 pA, a pyramid nucleus on the c(4 × 2) reconstructed patch with the adjacent p(2 × 2) reconstructed patch.Back to article page